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CREATED:20250704T093438Z
LAST-MODIFIED:20250704T093438Z
DTSTAMP:20260721T014644Z
UID:1784587604@tuc.gr
SUMMARY:Thesis presentation of Erasmus stude
 nt Alba Gallego Velazquez - School o
 f ECE
LOCATION:Λ - Κτίριο Επιστημών/ΗΜΜΥ
DESCRIPTION:https://www.ece.tuc.gr/el/katalogos-
 ekdiloseon?tx_tucevents2_tuceventsdi
 splay%5Baction%5D=show&tx_tucevents2
 _tuceventsdisplay%5Bcontroller%5D=Ev
 ent&tx_tucevents2_tuceventsdisplay%5
 Bevent%5D=7893&cHash=6a959da97b8c472
 6dd69f4fb09efd25b\nTECHNICAL UNIVERS
 ITY OF CRETE\n School of Electrical 
 and Computer Engineering \n Undergra
 duate Program\n Presentation of the 
 Diploma Thesis\n by Erasmus student 
 Alba Gallego Velazquez titled:\n Ver
 ilog-A Based Implementation of a MOS
 FET Model for Analog Integrated Circ
 uit Design\n Thesis Committee \n Pro
 fessor Matthias Bucher (supervisor)\
 n Associate Professor Konstantinos G
 yftakis\n Professor Daniel Morinigo-
 Sotelo (University of Valladolid)\n 
 Abstract \n Recent advances in the f
 ield of analogue electronics have le
 d to an increased demand for the cre
 ation of programmable models of anal
 ogue circuits. The present thesis se
 ts out the development and implement
 ation of a compact model of a MOSFET
 , based on the theoretical EKV model
 , and implemented using the Verilog-
 A language. The utilization of simul
 ation and compilation environments, 
 such as the open server OpenVAF and 
 Ngspice, is instrumental in facilita
 ting the effective execution of the 
 work. The construction of a model th
 at can perform the function of an nM
 OS or a pMOS nanometric operating in
  a saturated state is facilitated by
  these. In this model, physical depe
 ndencies such as temperature, channe
 l length, and second-order effects a
 re incorporated, ensuring the attain
 ment of continuous expressions for a
 ll inversion regions. The model's be
 haviour is validated against experim
 ental data by means of simulation, t
 hus enabling the evaluation of param
 eters such as drain current, inversi
 on coefficient, capacitances, transc
 onductances, and response to thermal
  and flicker noise. This results in 
 an accurate, compact and versatile m
 odel, which is suitable for supporti
 ng integrated analog circuits design
 s with a wide range of values for th
 e inversion coefficient.\n
STATUS:CONFIRMED
ORGANIZER;RSVP=FALSE;CN=TUC;CUTYPE=TUC:mailto:webmaster@tuc.gr
DTSTART:20250709T090000
DTEND:20250709T100000
TRANSP:OPAQUE
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